多晶硅有着半导体材料的基本性质和一些独特性质。引起了人们的注意,认为是一个值得注意的方向。我们研究了用SiCl_4制造多晶硅的方法,发现在减压和等离子体辉光放电的情况下,由于分子自由路程的增加,可以降低反应活化能,因而降低了反应温度。由于SiCl_4比硅烷易得,这是个降低成本的方法。 Polysilicon has the basic properties of semiconductor materials and some unique properties. Aroused people’s attention, that is a noteworthy direction. We have studied the method of making polycrystalline silicon with SiCl_4 and found that under the conditions of decompression and plasma glow discharge, the reaction activation energy can be reduced due to the increase of the free path of the molecule, thereby lowering the reaction temperature. Since SiCl 4 is more readily available than silane, this is a way to reduce costs.