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Ⅲ族氮化物器件开发初期主要是使用无掺杂n型GaN层的MESFET,其后将目光转为具有二维电子气的异质结场效应管(HFET)。目前频率在数GHz~10GHz器件的输出功率已达几十w~100W(输出功率密度:~10W/mm);几十GHz的频率下也能达到几W级的高输出功率。这是GaAs器件无法实现的高频功率水平。图是GaN FET与GaAs FET的比较。
The initial development of the Group III nitride devices was mainly the use of an MESFET with an undoped n-type GaN layer, which was later turned to a heterojunction field-effect transistor (HFET) with two-dimensional electron gas. At present, the output power of several GHz to 10 GHz devices has reached several tens of w ~ 100W (output power density: ~ 10W / mm); and the output power of several W levels can reach several tens of GHz. This is a high-frequency power level that GaAs devices can not achieve. Figure is a comparison of GaN FETs and GaAs FETs.