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In this paper we put forward a new concept about effective trapping center concentration N~e_T which is decreasing with the trapped charge Q corresponding to index movement,based on that,we discuss theⅠ-Ⅴand temperature characteristics of polysilicon resistors.The new concept presents ideal theoretical interpretion for the originally observed current-voltage negative-resistance characteristics of polysilicon resistors formed on the flow sensor,and also for poly-silicon film resistors. The final results agree well with the theoretical current-voltage characteristics.
In this paper we put forward a new concept about effective trapping center concentration N ~ e_T which is decreasing with the trapped charge Q corresponding to index movement, based on that, we discuss the I-V and temperature characteristics of polysilicon resistors. theoretical interpretion for the originally observed current-voltage negative-resistance characteristics of polysilicon resistors formed on the flow sensor, and also for poly-silicon film resistors. The final results agree well with the theoretical current-voltage characteristics.