本文着重研究双掺硅片热氧化后形成p-n结的结深规律.在理论上导出了p-n结的结深表达式:在一定的温度下,结深与氧化热处理时间的平方根成正比;并且与p型和n型杂质的掺杂比v有关,随着v增大,结深减小,实验结果与该式反映的规律基本吻合. This paper focuses on the study of the deep junction regularity of pn junction formed by thermal oxidation of double-doped silicon wafer.The junction depth of pn junction is theoretically derived: at a certain temperature, the junction depth is proportional to the square root of the oxidation heat treatment time, The doping of p-type and n-type impurities is related to v. As v increases, the junction depth decreases. The experimental results are in good agreement with the law reflected by this equation.