东京芝浦电气综合研究所等最近研制了一种新结构的集成注入逻辑S~2L(自对准超注入逻辑一Self-Aligned Super Injection Logic)。S~2L 的结构特点是(1)用二种扩散形成pnp 晶体管的基极和射极。(2)npn 晶体管具有外延基极。结果可以实现功率延迟积0.06PJ/门,在80μW 这样低功耗的情况下,最小延迟时间可以达到10ns。S~2L 的基本结构(1)I~2L 的问题决定I~2L 性能的主要因素是npn 和pnp 的电流放大系数。npn 管的各个结电容以及少 Tokyo Shibaura Institute of Electrical Synthesis and other recently developed a new structure of integrated injection logic S ~ 2L (Self-Align super-injection logic of a Self-Aligned Super Injection Logic). The structural features of S ~ 2L are: (1) Two kinds of diffusion are used to form the base and the emitter of a pnp transistor. (2) npn transistor has an extended base. The result is a power-delay product of 0.06 PJ / gate with a minimum delay of 10 ns at 80 μW. Basic Structure of S ~ 2L (1) Problem of I ~ 2L The main factor that determines the performance of I ~ 2L is the current amplification factor of npn and pnp. npn each tube capacitance as well as less