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利用饱和吸收的方法得到了铯分子在780 nm附近X1Σg+→B1Πu能级跃迁吸收带的一段饱和吸收谱,利用铷87Rb原子饱和吸收谱的5S1/2(F=2)→5P3/2(F′=2)的跃迁线为标准确定这一段饱和吸收谱的位置。实验中对其中的5条吸收峰进行了仔细观测,利用其中的一条饱和吸收峰“R5”对780 nm半导体激光器进行了稳频。测得稳频后的激光在800 s内频率的漂移小于1.5 MHz,从而提供了一种利用铯分子饱和吸收峰对780 nm半导体激光器进行稳频的新方法。此激光可以用于制备超冷基态铯分子,同时也可作为光通信波段1560 nm处的倍频参考光。
A saturated absorption spectrum of the absorption band of X1Σg + → B1Πu in the vicinity of 780 nm was obtained by the method of saturated absorption. The absorption band of 5S1 / 2 (F = 2) → 5P3 / 2 (F ’ = 2) as the standard transition line to determine the location of this section of the saturated absorption spectrum. In the experiment, five of the absorption peaks were carefully observed, and the 780 nm semiconductor laser was frequency-stabilized by using one of the absorption peaks “R5”. It is found that the frequency-stabilized laser drifts less than 1.5 MHz in 800 s, providing a new method for frequency-stabilizing a 780 nm semiconductor laser with a saturated absorption peak of cesium. This laser can be used to prepare cesium molecules in the supercooled ground state, and can also be used as the frequency-doubling reference light at 1560 nm in the optical communication band.