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提出了一种堆叠栅介质对称双栅单Halo应变Si金属氧化物半导体场效应管(metal-oxide semiconductor field effect transistor,MOSFET)新器件结构.采用分区的抛物线电势近似法和通用边界条件求解二维泊松方程,建立了全耗尽条件下的表面势和阈值电压的解析模型.该结构的应变硅沟道有两个掺杂区域,和常规双栅器件(均匀掺杂沟道)比较,沟道表面势呈阶梯电势分布,能进一步提高载流子迁移率;探讨了漏源电压对短沟道效应的影响;分析得到阈值电压随缓冲层Ge组分的提高而降低,随堆叠栅介质高k层介电常数的增大而增大,随源端应变硅沟道掺杂浓度的升高而增大,并解释了其物理机理.分析结果表明:该新结构器件能够更好地减小阈值电压漂移,抑制短沟道效应,为纳米领域MOSFET器件设计提供了指导.
A novel structure of a single-Halo strained Si-MOSFET with stacked gate dielectric is proposed. The partitioned parabolic potential approximation method and universal boundary conditions are used to solve two-dimensional Poisson equation, an analytic model of surface potential and threshold voltage under full depletion condition is established. The strained silicon channel has two doping regions, compared with the conventional double-gate device (uniform doping channel) The surface potential of the channel shows a ladder potential distribution, which can further increase the carrier mobility. The effect of drain-source voltage on the short channel effect is also discussed. The threshold voltage is decreased with the increase of the Ge composition of the buffer layer. k layer increases with the increase of the dielectric constant, and increases with the doping concentration of the strained silicon channel at the source end, and explains its physical mechanism.The analysis results show that the new structure device can be better reduced Threshold voltage drift, short-channel effect, providing guidance for the design of MOSFET devices in the field of nanotechnology.