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报道了栅氧化淀积多晶硅前后分别注入43keVF离子的Si栅P沟MOSFET电离辐射响应关系。结果发现,多晶硅面注F具有较强的抑制辐射感生阈电压漂移,控制氧化物电荷和界面态生长的能力。用多晶硅面注F带入栅介质较少注入缺陷和较多替代辐射敏感应力键的F离子模型对实验结果进行了讨论。
The ionization radiation response of Si gate P-channel MOSFET with 43keVF ions implanted before and after gate oxide polycrystalline silicon deposition was reported. The results show that the polysilicon surface has the strong ability to suppress the threshold voltage shift induced by radiation and control the charge of oxide and the growth of interfacial states. The experimental results are discussed using the F-ion model with polycrystalline silicon surface (F) implanted into the gate dielectric with fewer defects and more alternative radiation-sensitive stress bonds.