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本文提出了一个俘越器件的简化电压、电流波形,并且进行了分析;建立了器件参数与二次谐波阻抗的联系;求得了二次谐波抽出俘越振荡器近似设计的必要条件;采用浅绪N~+PP~+型硅俘越二极管研制成功了十厘米二次谐波抽出俘越振荡器。此振荡器在2700MHz至3300MHz范围内可获得160W至210W的功率输出(脉宽为0.5μs,工作比为1/1000),效率为10％至15％,频率稳定度小于1×10~(-4),并且具有可调范围大,输出端杂波抑制特性好等优点以及较好的机械可靠性,从而提供了一种十厘米单脉冲体制固体发射源,可用于十厘米应答器,敌我识别器等方面。
In this paper, the simplified voltage and current waveforms of a capture device are presented and analyzed. The relationship between the device parameters and the second harmonic impedance is established. The necessary conditions for the approximate design of the second harmonic extraction and capture oscillator are obtained. Asustek N ~ + PP ~ + type silicon capture diode developed successful 10 cm second harmonic extraction captive oscillator. The oscillator achieves a power output of 160W to 210W (pulse width 0.5μs, duty ratio 1/1000) in the range of 2700MHz to 3300MHz with an efficiency of 10% to 15% and a frequency stability of less than 1 × 10 ~ (- 4) and has the advantages of large adjustable range, good rejection of clutter at the output, and better mechanical reliability, thereby providing a ten centimeter single pulse solid-state emitting source that can be used for a ten-centimeter transponder, And so on.