从ＲＭＯＳ器件的导通电阻模型出发，通过分析导通电阻与栅氧化层厚度和槽深间的定量关系，得出：减薄栅氧化层厚度或增加槽的深度，可以降低器件的导通电阻和器件的反向耐压；反之，器件的导通电阻和反向耐压增加。同时，浅槽结构比深槽结构更理想。文中还讨论了器件的版图布局。结果表明，条形结构优于元胞结构。 Based on the on-resistance model of RMOS device, the quantitative relationship between on-resistance and gate oxide thickness and trench depth is analyzed. It is concluded that the thickness of the gate oxide layer is reduced or the depth of the trench is increased to reduce the on- And the device’s reverse withstand voltage; the other hand, the device’s on-resistance and reverse voltage increase. At the same time, the shallow groove structure is more ideal than the deep groove structure. The article also discusses the layout of the device layout. The results show that the stripe structure is superior to the cell structure.