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碳化硅(SiC)单晶是一种宽禁带半导体材料,被广泛应用于制作高温、高频及大功率电子器件。此外,由于SiC和氮化镓的晶格失配小,SiC单晶是氮化镓基LED、肖特基二极管等器件的理想衬底材料。为降低器件成本,下游产业对SiC单晶衬底提出了大尺寸的要求,目前国际市场上已有6英寸产品,预计市场份额将逐年增大。中国科学院物理研究所/北京凝聚态物理国家实验室(筹)先进材料与结构
Silicon carbide (SiC) single crystal is a wide bandgap semiconductor material that is widely used in making high temperature, high frequency and high power electronic devices. In addition, due to the small lattice mismatch between SiC and gallium nitride, SiC single crystals are ideal substrate materials for devices such as gallium nitride-based LEDs and Schottky diodes. In order to reduce the device cost, the downstream industry has put forward large-size requirements for the SiC single crystal substrate. Currently, 6-inch products are already on the international market, and the market share is expected to increase year by year. Institute of Physics, Chinese Academy of Sciences / Beijing State Key Laboratory of Condensed Matter (Prep) Advanced Materials and Structures