本文研究７７Ｋ下薄栅ＮＭＯＳＦＥＴ在Ｆ－Ｎ均匀电子注入时栅氧化层对电荷的俘获特性．发现沟道区上方栅氧化层将俘获净正电荷，使阈值电压下降；而栅边缘氧化层对电子的俘获明显增强，并高于室温下的对应值，从而导致ＮＭＯＳＦＥＴ关态特性变差，沟道电阻增大，以及电流驱动能力的显著降低；提出了栅边缘氧化层增强电子俘获的深能级中性陷阱机制． In this paper, the charge trapping characteristics of gate oxide at 77K under the uniform F-N electron injection are studied. It is found that the gate oxide layer above the channel region will capture a net positive charge so as to decrease the threshold voltage; while the trapping of the gate oxide layer on the edge of the gate electrode obviously increases, which is higher than the corresponding value at room temperature, The channel resistance increases and the current driving capability decreases significantly. A deep level neutral trap mechanism is proposed to enhance the electron trapping by the gate oxide layer.