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叙述了动态应力下MOS器件和电路的热载流子效应及可靠性研究进展。对当前MOS电路中的动态应力热载流子退化现象及其物理机制进行了详细论述,为动态应力下CMOS电路热载流子可靠性研究奠定了基础。还对动态应力热载流子可靠性的准静态表征方法进行了讨论。
The hot carrier effect and reliability of MOS devices and circuits under dynamic stress are described. The current phenomenon of hot carrier degradation and its physical mechanism in MOS circuits are discussed in detail, which lays the foundation for the study of hot carrier reliability in CMOS circuits under dynamic stress. The quasi-static characterization method for the reliability of dynamic stress hot carriers is also discussed.