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用多种实验手段分别对地面和太空生长的掺Te砷化镓单晶的电学、光学均匀性和深能级行为进行了实验研究.初步结果表明:在太空进行再生长的GaAs单晶电子浓度比原地面生长的籽晶小一个数量级,电子浓度由地面晶体到太空晶体的过渡是陡变的;DLTS测量发现太空单晶中存在两个电子陷阱,分别位于导带下0.27eV和0.60eV处,深能级密度为浅施主N_D的10~(-3)-10~(-4);少子注入未观察到空穴陷阱;用太空GaAs单晶为衬底制备的25个单异质结(SH)二极管,具有一致的I-V和发光特性,这反映了太空晶体的均匀性优于地面晶体.此外,还对太空生长GaAs单晶电子浓度降低的可能原因、深能级行为以及太空生长高质量晶体的前景作讨论.
Experiments on the electrical, optical homogeneity and deep level behavior of GaAs single crystals grown on the ground and in space were carried out by a variety of experimental methods.The preliminary results show that the GaAs single crystal electron density regrowth in space Which is one order of magnitude smaller than the seed grown on the ground. The electron concentration changes sharply from the ground crystal to the space crystal. The DLTS measurement shows that there are two electron traps in the space single crystal at 0.27 eV and 0.60 eV respectively, The deep level densities were 10 -3 -3 -10 -4 (shallow donor N_D), no hole traps were observed in the minority carriers, and 25 single heterojunctions (SHs ) Diodes with consistent IV and luminescence properties, reflecting the uniformity of space crystals outperforming ground-based crystals and the possible reasons for the decreased concentration of GaAs single-crystal electrons in deep space as well as deep-level behavior and high-quality space-grown crystals The prospects for discussion.