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本文通过对LPCVD生长高温Si_3N_4膜的反应过程和机理进行了详细的分析,并着重讨论了反应源在一定的温度分布、压力和气流条件下,进行化学气相淀积时的各种关系,然后通过正交试验方法,找出最佳的温度分布、压力和气流的工艺条件,获得了质量高、均匀性好的Si_3N_4膜.并达到了国际上同类产品的先进水平.对一年多来在LPCVD生长近四万片的Si_3N_4膜用于双极型器件中,与常压CVD作了对比,Si_3N_4膜的合格率提高了33.2％,生产效率提高了一个数量级以上,对器件的合格率和可靠性有明显的贡献,已取得了显著的经济效益.
In this paper, the reaction process and mechanism of high temperature Si_3N_4 film grown by LPCVD are analyzed in detail, and the relationships of reaction source under chemical vapor deposition under certain temperature distribution, pressure and air flow conditions are emphatically discussed, Orthogonal test method to find the best temperature distribution, pressure and airflow conditions, access to high quality, good uniformity of Si_3N_4 film and reached the international advanced level of similar products.For more than a year in LPCVD Nearly 40,000 Si_3N_4 films were grown in bipolar devices. Comparing with atmospheric CVD, the yield of Si_3N_4 films increased by 33.2% and the production efficiency increased by more than an order of magnitude. The pass rate and reliability of the devices Have made obvious contributions, have achieved significant economic benefits.