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本报告给出在800～1150℃温度范围内由 SiH_4淀积硅的试验、结果。淀积是在大气压和在0.2～1.0乇的范围内减压下进行的,减压为的是有可能在反应管中维持高频辉光放电。由于使用了高频放电因而在800℃下无论是在未掺杂或重掺杂的 n 型层上都可获得良好质量的、外延生长层。使用放电主要的好处是考虑在淀积前将衬底予以明显的清洗。
This report presents the results of silicon deposition from SiH 4 at 800-1150 ° C. The deposition is carried out under reduced pressure at atmospheric pressure and in the range of 0.2 to 1.0 Torr, and it is possible to maintain the high-frequency glow discharge in the reaction tube under reduced pressure. Due to the use of high-frequency discharge, a good quality epitaxial layer can be obtained at 800 ° C both on the undoped or heavily doped n-type layer. The main benefit of using a discharge is that it allows for significant cleaning of the substrate prior to deposition.