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纳米非晶氮化硅由尺寸为纳米级非晶小颗粒经压制而成,界面占很大的比例.这种新型团体出现一些传统氮化硅所不具有的特殊性能.传统氮化硅是良好的绝缘体,研究它的介电行为当然十分重要.传统热压烧结和反应烧结获得的氮化硅的介电常数约为8.36,不论是晶态还是非晶态氮化硅在室温下的介电常数与频率无关.对于纳米非晶氨化硅介电行为的研究却未见报道.本文将系统研究纳米非晶氮化硅的介电行为,并深入研究产生这种特殊行为的机制.
Nano-amorphous silicon nitride by the size of nanoscale amorphous small particles by pressing, the interface accounts for a large proportion of this new group of some traditional silicon nitride does not have the special properties of traditional silicon nitride is good Of the insulator, of course it is very important to study the dielectric behavior of silicon nitride obtained by conventional hot pressing and reactive sintering dielectric constant of about 8.36, either crystalline or amorphous silicon nitride at room temperature dielectric However, the study of the dielectric behavior of nanocrystalline amorphous silicon nitride has not been reported.In this paper, the dielectric behavior of nanocrystalline amorphous silicon nitride has been systematically studied and the mechanism of producing this kind of special behavior has been studied.