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用液封切克劳斯基(LEC)方法在热解氮化硼坩埚中生长的半绝缘GaAs,由于它的优越的可重复性和均匀性,在用作制备高速器件和集成电路的直接离子注入衬底方面正受到欢迎。最近的文章阐明了GaAs晶体的电导率与生长熔体组分之间的关系。一个充分富砷的熔体由于确保深施主EL2的存在以补偿比浅施主多的净剩余的碳受主而使晶体成为半绝缘。贫砷的熔体导致包含两个深受主的p型晶体,这也许不但与在半绝缘材料中发现的杂质受主和施主有关,而且也和化学计量相关的晶格缺陷有联系。
Semi-insulating GaAs grown in a pyrolytic boron nitride crucible with a liquid-sealed Czochralski (LEC) method, due to its superior repeatability and uniformity, is used in direct ion implantation for the fabrication of high-speed devices and integrated circuits The substrate is gaining popularity. Recent articles have elucidated the relationship between the conductivity of GaAs crystals and the growth of the melt components. A fully arsenic-rich melt is made semi-insulating by ensuring that the donor EL2 is present to compensate for the net remaining carbon acceptors more than the shallow donor. The arsenic-depleted melt results in the inclusion of two deeply-affected p-type crystals, which may be related not only to the acceptor and donor of impurities found in semi-insulating materials but also to stoichiometric lattice defects.