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本文所述的结构模型是将MTL器件表示为分离的二级管,这些二级管是根据各种电子和空穴沿有源p-n结注入来选定的。收集极所在的地方就是电流源。所叙述的测量程序有可能定量地区分各种注入,从而确定模型参数。这样的测量结果是给定的。器件的端极参数,象电流增益及存储时间常数,都可根据对任意平面几何图形器件的测量预知,因此,注入模型能当作器件的最佳化工具,其电路分析模型可用以表示内部器件的串联电阻,而Ebers-Moll模型却不能表示。由于注入模型能使我们对双极器件,特别是横向p-n-p管和饱和的n-p-n管有很好的了解,因此,它除对MTL外,对其它逻辑线路也是有重要意义的。
The structural model described here is to represent MTL devices as separate diodes that are selected based on the injection of various electrons and holes along active p-n junctions. Where the collector is the current source. The described measurement procedure makes it possible to quantify the various injections in order to determine the model parameters. This measurement is given. The terminal parameters of the device, such as current gain and storage time constant, can be predicted based on the measurement of any planar geometry device, so the injection model can be used as an optimization tool for the device whose circuit analysis model can be used to represent the internal device Series resistance, Ebers-Moll model can not be said. Since the injection model gives us a good understanding of bipolar devices, especially horizontal p-n-p tubes and saturated n-p-n tubes, it is also of importance for other logic lines in addition to MTL.