在不同溅射氮分压条件下,采用射频反应磁控溅射技术于单晶硅片表面制备了Zr-Nb-N薄膜。EDS、TEM和XRD分析表明,随着氮分压的升高,薄膜中N含量上升,Nb含量下降,细晶组织粗化,同时单一相Zr-Nb-N固溶体出现NbN与ZrN两相分离。采用四探针电阻测试仪和显微硬度计分别测量了薄膜的方阻和显微硬度,结果表明随着氮分压的升高,薄膜的方阻降低,显微硬度先升高后降低。 Zr-Nb-N thin films were prepared on the surface of monocrystalline silicon wafer by RF reactive magnetron sputtering under different sputtering nitrogen partial pressures. The results of EDS, TEM and XRD show that with the increase of nitrogen partial pressure, the content of N increases, the content of Nb decreases and the fine grain structure coarsens. At the same time, the single phase Zr-Nb-N solid solution has two phases of NbN and ZrN separated. The square resistance and microhardness of the films were measured by four-probe resistance tester and microhardness tester. The results showed that the square resistance of the films decreased with the increase of nitrogen partial pressure, and the microhardness firstly increased and then decreased.