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本文提出一种用一次扩散获得不同硼杂质浓度和结深的器件制造方法,它是利用高浓硼杂质穿透二氧化硅层的选择扩散来实现的。采用这一方法,既能保证平面晶体管本征基区所要求的杂质总量和结深,又可同时制得杂质总量和结深均较大的非本征基区,有利于避免表面沟道效应,减小基区电阻以及减弱基区下陷效应的影响,从而改善分立器件和集成电路的性能。此外,在集成电路中采用类似的方法,还可以同时获得不同β的晶体管和方块电阻不同的硼扩散电阻器,从而增加了集成电路设计的灵活性。
In this paper, we propose a method to fabricate devices with different boron impurity concentrations and junction depths by one-pass diffusion, using selective diffusion of highly concentrated boron impurities through the silicon dioxide layer. Adopting this method can not only ensure the total amount of impurities and junction depth required by the intrinsic base region of the planar transistor, but also simultaneously produce the extrinsic base region with greater total impurity and junction depth, which is beneficial to avoid the surface ditch Channel effect, reducing the resistance of the base and reducing the effect of base-down effects, thereby improving the performance of discrete devices and integrated circuits. In addition, using a similar approach in integrated circuits, it is also possible to obtain transistors with different β and different boron diffusion resistors with different sheet resistance, thereby increasing the flexibility of integrated circuit design.