砷化镓正在赶上硅。由于砷化镓中电子的迁移速度比硅中快4倍,因此对于超级计算机、光信号处理机和卫星广播接收机来说它是一种理想的材料。问题是以可竞争的价格大量生产高质量的砷化镓。日本东芝公司声称已解决了这个问题。该公司改进了通常的拉晶法——液态封装切克劳斯基法。通常方法的一个缺点是对流引起熔体内温度涨落达15℃。这会引起晶锭切下的晶片的电特 Gallium arsenide is catching up with silicon. Since gallium arsenide migrates 4 times faster than silicon in silicon, it is an ideal material for supercomputers, optical signal processors and satellite broadcast receivers. The problem is mass-producing high-quality gallium arsenide at a competitive price. Toshiba Japan claims it has solved the problem. The company has improved the usual crystal-pulling Czochralski method. A drawback of the usual methods is that the convection causes a temperature fluctuation in the melt of up to 15 ° C. This can cause the ingot to cut off the electrical characteristics of the wafer