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本文研发了一种简便有效的在GaN半导体衬底上直接生长纳米金刚石膜的方法。研究发现,直接将GaN衬底暴露于氢等离子体中5 min即发生分解,且随着温度从560℃升高至680℃,这种分解反应愈加剧烈,很难在GaN衬底上直接形成结合力良好的纳米金刚石膜。通过在GaN衬底上镀制几纳米厚的硅过渡层,在富氢金刚石生长环境下,抑制了GaN衬底的分解,同时在GaN衬底上沉积了约2μm厚的纳米金刚石膜。硅过渡层厚度是决定纳米金刚石与GaN衬底结合力的主要因素。当硅过渡层厚度为10 nm时,纳米金刚石膜与GaN衬底呈现出大于10 N的结合力,可能与硅过渡层在金刚石生长过程中向SiC过渡层转变有关。
In this paper, a simple and effective method for the direct growth of nano-diamond films on GaN semiconductor substrates has been developed. It was found that the GaN substrate was directly decomposed by exposure to hydrogen plasma for 5 min, and as the temperature increased from 560 ° C to 680 ° C, the decomposition reaction became more and more severe, making it difficult to directly form a GaN substrate Powerful nano-diamond film. By plating a few nanometers thick silicon transition layer on a GaN substrate, the decomposition of the GaN substrate is suppressed in a hydrogen-rich diamond growth environment while a nano-diamond film about 2 μm thick is deposited on the GaN substrate. The thickness of silicon transition layer is the main factor that determines the binding force between nano-diamond and GaN substrate. When the thickness of the silicon transition layer is 10 nm, the bonding strength between the nanodiamond film and the GaN substrate is greater than 10 N, which may be related to the transition of the silicon transition layer to the SiC transition layer during diamond growth.