论文部分内容阅读
提出一种ＦＬＯＴＯＸＥ２ＰＲＯＭ存储管的电流—电压模型，模型的模拟结果和实验结果相吻合，该模型为精确设计和利用Ｅ２ＰＲＯＭ单元提供了理论基础。
A current-voltage model of FLOTOXE2PROM memory tube is proposed. The simulation results of the model agree well with the experimental results. This model provides a theoretical basis for accurate design and utilization of E2PROM cells.