《半导体技术》1983年第3期中的《MOS管阈值电压的理论修正》(以下简称《理论修正》)一文,从实测的MOS管阈值电压与宽长比W/L有关并比理论值显著增大的现象出发,提出了一种主要发生在长沟道MOS管中的“沟道电阻效应”,并据此对传统的阈值电压公式作了理论修正.我们认为其中的一些概念需要加以澄清,问题的实质是对阈值电压的定义.此外,该文在计算沟道离子注入对阈值电压的调整时所用的公式也欠妥. The article “Theoretical Modification of MOS Tube Threshold Voltage” in “Semiconductor Technology”, No. 3, 1983, from the measured MOS tube threshold voltage is related to the W / L ratio and significantly higher than the theoretical value We propose a “channel resistance effect” that mainly occurs in a long channel MOS transistor, and theoretically correct the traditional threshold voltage formula.We think some of the concepts need to be clarified, The essence of the problem is the definition of the threshold voltage.In addition, the formula used in calculating the threshold voltage of channel ion implantation is not satisfactory.