硅绝缘体相关论文
Resonant cavity enhanced photoluminescence of tensile strained Ge/SiGe quantum wells on silicon-on-i
The tensile strained Ge/SiGe multiple quantum wells(MQWs) grown on a silicon-on-insulator(SOI) substrate were fabricated......
采用聚焦离子束在硅绝缘体上制备圆孔光子晶体。光子晶体对孔壁的陡直度有相当高的要求。然而由于聚焦离子束的沉积作用,制备出来......
We report a self-collimating demonstration in planar photonic crystals (PhCs) fabricated in silicon-on-insulator (SOI) w......
The mode coupling is a major factor to affect the precision of the micro electromechanical systems(MEMS) gyroscope. Curr......
A NEW STRUCTURE AND ITS ANALYTICAL BREAKDOWN MODEL OF HIGH VOLTAGE SOI DEVICE WITH STEP UNMOVABLE SU
<正>A new SOI (Silicon On Insulator) high voltage device with Step Unmovable Surface Charges (SUSC) of buried oxide laye......
A 10-MHz face shear(FS) square micromechanical resonator based on silicon-on-insulator(SOI)technology is presented in th......
到2003年,全球电子化工和电子材料市场规模将年均增长8.2%,可达到620亿美元。其中硅晶片的销售将年均增长6.2%,另一种半导体晶片砷......
