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White light emitting diodes from a single emitter is of sig-nificance in application of illumination and image display b......
设计了一种连接被检智能电能表与标准表的适配器,在进行射频电磁场辐射抗扰度试验时,利用CALPORT300标准表,测量智能电能表电脉冲......
An Er2O3coating-type selective emitter for themophotovoltaic application was prepared by plasma spray technology.The tes......
All the isotopes of technetium are radioactive,among which,99 Tc can be acquired in abundance as a long-lifeβ-emitter,w......
Design and optimization of a SiC thermal emitter/absorber composed of periodic microstructures based
Spectral and directional control of thermal emission based on excitation of confined electromagnetic resonant modes pave......
1 Multiple-β transistor and linear AND-OR gate The high-speed and real-time processing of information requires a highe......
新一代汽车已开始普遍使用新型点火线圈(coil-on-plug),为了与新线圈相匹配,国际整流器公司(International Rectifier,简称IR)特......
The intrinsic width of the energy distribution from Schottky and field emission sources is betwen 0.2 and 0.8eV.For high......
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Co synthesis silicides with good properties were prepared using MEVVA ion implantation with flux of 25-125μA/cm2 to doe......
文章提出了一种基于子电路的IGBT模型,并对IGBT的温度特性进行模拟。用电压控制的可变电阻等效IGBT的宽基区调制电阻取得了很好的......
A bandgap voltage reference is designed to meet the requirements of low power loss,low temperature coefficient and high ......
e FD spectra of nineteen 3′,5′-cyclic nucleotides and their derivatives are reported.The principal features of spectr......
147Sm is one of natural α emitter nuclide. The 147Sm-143Nd dating method established by Lugmair plays an important role......
六边形发射极的自对准 In Ga P/ Ga As异质结具有优异的直流和微波性能 .采用发射极面积为 2μm× 10μm的异质结双极型晶体管 ,VC......
Carbon nanotubes and nanocoils are expected as the charging materials and electron gun for the imaging devices. It is sy......
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用光电晶体管替换 HEMT作为输入端 ,结合 RTD可以构成新的光控逻辑单元 ,它具有光电流开关和自锁功能 ,该功能在实验及电路模拟中......
Design and Fabrication of Novel Dual-Base Negative-Differential-Resistance Heterojunction Bipolar Tr
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An accurate and broad|band method for heterojunction bipolar transistors (HBT) small|signal model parameters|extraction ......
The HOPping Field Emission Display (HOPFED) is a new architecture for field emission displays. The main difference betwe......
Based on the advantages of SOI technology, the frequency performance of SiGe HBT with SOI structure has been simulated. ......
研究了薄基区HBT合金温度对残余电压Voffset和欧姆接触电阻Rcontact的影响,给出了薄基区HBT的最佳合金温度区域.用肖特基钳位理论......
This paper mainly describes a research of fabrication-technology of silicon magnetic-sensitive transistor (SMST) with re......
An up-conversion mixer implemented in a 0.35μm SiGe BiCMOS technology for a double conver-sion cable TV tuner is descri......
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A silicon-based PIN photodetector structure with the characteristics of high responsibility and high cut-off frequency f......
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Zn-doped InGaAs Base Heterojunction Bipolar Transistors Grown by Low Pressure Metal Organic Chemical
High performance InP/InGaAs heterojunction bipolar transistors(HBTs) have been widely used in high-speed electronic devi......
成功研制出非均匀发射极条间距功率SiGe异质结双极晶体管(HBT)用以改善功率器件热稳定性.实验结果表明,在相同的工作条件下,与传统......
报道了具有基极微空气桥和发射极空气桥结构的InP单异质结双极型晶体管(SHBT).由于基极微空气桥和发射极空气桥结构有效地减小了寄......
Proposed and demonstrated is a novel computer modeling method for high power light emitting diodes(LEDs). It contains ge......
Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In_
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通过流片,制作出肖特基栅共振隧穿三极管(SGRTT) .根据ATLAS软件的模拟发现,当发射极接地,集电极接外加偏压时,栅极电压对于SGRTT......
成功地将Polyimide钝化平坦化工艺应用于InP/InGaAs单异质结晶体管制作工艺中.在Vce=1.1V,Ic=33.5mA的偏置条件下,发射极尺寸为1.4......
In this paper,a new structure of a 4H-SiC bipolar junction transistor(BJT) with a buried layer(BL) in the base is presen......
Thermal analytic model of current gain for bipolar junction transistor-bipolar static induction tran
This paper proposes a thermal analytical model of current gain for bipolar junction transistor-bipolar static induction ......
Heavy doping of the base in HBTs brings about a bandgap narrowing (BGN) effect, which modifies the intrinsic carrier den......
Several μ-bridge structures for InP-based heterojunction bipolar transistors (HBTs) are reported.The radio frequency me......
The enhanced low-dose-rate sensitivity (ELDRS) and dose-rate dependence of vertical NPN transis- tors are investigated i......
In this paper,a novel and reliable structure of the side passivated emitter and the rear locally-diffused(PERL)silicon l......
Small-signal model parameter extraction for microwave SiGe HBTs based on Y- and Z-parameter characte
High frequency intrinsic small-signal model parameter extraction for microwave SiGe heterojunction bipolar transistors i......
InP/InGaAs/InP double heterojunction bipolar transistors (DHBTs) were designed for wide band digital and analog circuits......
A self-built accurate and flexible large-signal model based on an analysis of the characteristics of InP double heteroju......
A low-noise amplifier(LNA)operated at 40 GHz is designed.An improved cascode configuration is proposed and the design of......
Dependence of charge trapping of fluorescent and phosphorescent dopants in organic light-emitting di
This paper utilizes multilayer organic light-emitting diodes with a thin layer of dye molecules to study the mechanism o......
