比利时微电子研究中心(IMEC)宣称开发出全球首款在300 mm晶圆上整合Ⅲ-Ⅴ族与硅晶材料的3DFinFET化合物半导体。IMEC的新制程目标是希望能持续微缩CMOS至7 nm及其以下,以及实现混合CMOS-RF与CMOS光电元件的化合物。随着晶片微缩即将接近原子级的限制,业界致力于提高晶片性能与降低功 The Belgian Microelectronics Research Center (IMEC) announces the world’s first 3DFinFET compound semiconductor to integrate III-V and silicon materials on 300 mm wafers. The goal of IMEC’s ​​new process is to continue scaling down to 7 nm and below, as well as compounding CMOS-RF and CMOS optoelectronics. As the miniaturization of wafers approaches the atomic-level limits, the industry is committed to improving wafer performance and reducing work