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通过对多孔硅光致发光峰随测量温度变化的研究，发现随测量温度的下降，光致发光峰位有两种截然不同的移动方向：发光峰中心波长较长的样品，主峰向低能方向移动（即红移）；而发光峰位波长较短的样品则向高能方向移动（即蓝移）．根据多孔硅光致发光峰的温度效应，定性地给出了发光效率随波长变化的模拟曲线，并由此能较好地解释多孔硅光致发光峰位随温度变化而移动的实验现象．
Through the study of the change of the photoluminescence peak of the porous silicon with the measurement temperature, it is found that the photoluminescence peak has two distinct moving directions with the decreasing of the measurement temperature: the sample with the longer central wavelength of the luminescence peak and the main peak moving to the lower energy direction (Ie, redshift), whereas samples with shorter peak wavelengths shift toward higher energies (ie, blue shift). According to the temperature effect of the photoluminescence peak of porous silicon, the simulation curve of luminescence efficiency with wavelength is given qualitatively, and the experimental phenomenon that the peak of photoluminescence of porous silicon moves with temperature can be well explained.