论文部分内容阅读
Ⅲ-Ⅴ族化合物半导体材料GaAs,由于其本征载流子浓度比Si约低104,电子迁移率约是Si的5倍,电阻率高达108Ωcm,有利于降低寄生电容,减少漏电流;另外,GaAs材料便于加工,可方便地实现大规模集成,适用于制作MESFET器件。目前用于太赫兹探测的GaAs MESFET在国际上有了较大的发展,为了进一步研究MESFET的器件特性,参照国外现有的作为太赫兹探测的GaAsMESFET器件结构,通过建立器件结构模型,并进行掺杂、网格化后使用Synopsys器件模拟软件求解泊松方程,计算并分析了其电流电压特性。计算结果和实验测量结果比较吻合。
III-V compound semiconductor material GaAs, due to its intrinsic carrier concentration lower than Si about 104, the electron mobility is about 5 times that of Si, the resistivity as high as 108Ωcm, help to reduce the parasitic capacitance and reduce the leakage current; In addition, GaAs material is easy to process and can be easily integrated for large scale fabrication, making it ideal for MESFET devices. At present, the GaAs MESFET used for terahertz detection has a great development in the world. In order to further study the device characteristics of MESFET, referring to the existing GaAsMESFET device structure as the terahertz detection in foreign countries, the device structure model is established and doped After meshing, the Poisson equation was solved by Synopsys device simulation software, and the current-voltage characteristics were calculated and analyzed. The calculated results are in good agreement with the experimental measurements.