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The Al-Ti composite oxide films with high dielectric constant were prepared by hydrolysis precipitation and anodizing. The growth, structure and electrical properties of the Al-Ti composite oxide films formed at different anodizing temperatures from 25℃ to 85℃ have been studied by dissolution of anodic oxide films, Auger electron spectroscopy (AES), and electrical measurements. With the anodizing temperature increasing, the film growth rate increases, the structure of two layers in the Al-Ti composite oxide film converts into three layers, I-V characteristics change evidently, and the specific capacitance achieves a peak value at about 75℃. The local breakdown in the composite oxide films formed at 50℃ occurs obviously, which may be contributed to the lowest leakage current and the highest withstanding voltage.
The growth, structure and electrical properties of the Al-Ti composite oxide films formed at different anodizing temperatures from 25 ° C to 85 ° C have been studied by dissolution of anodic oxide films, Auger electron spectroscopy (AES), and electrical measurements. With the anodizing temperature increasing, the film growth rate increases, the structure of two layers in the Al-Ti composite oxide film converts into three layers, IV characteristics change evidently , and the specific capacitance achieves a peak value at about 75 ° C. The local breakdown in the composite oxide films formed at 50 ° C shows obviously, which may be contributed to the lowest leakage current and the highest withstanding voltage.