继钆(Gd)之后,作者们发现,Pd是又一种具有特殊界面效应的金属杂质。与金(Au)、钆(Gd)类似,掺Pd后同样能引起MOS高频和准静态 C—V曲线同时沿正压方向平移。显示了Pd引入了负电荷或使原有界面正电荷减少。氧气氛下进行的不同温度退火处理的结果如图1,看出,随着温度的升高Pd电荷Qpd/q慢慢增大,约在1100℃ Following gadolinium (Gd), the authors found that Pd is yet another metal impurity with a special interfacial effect. Similar to gold (Au) and gadolinium (Gd), the doping of Pd can also cause the high-frequency and quasi-static MOS C-V curves to translate simultaneously in the positive pressure direction. It is shown that Pd introduces a negative charge or reduces the positive charge of the original interface. The results of annealing at different temperatures under oxygen atmosphere are shown in Fig. 1. It can be seen that the Pd charge Qpd / q gradually increases with the increase of temperature,