随着近年来Ⅲ—Ⅴ族超薄外廷生长和微结构技术的发展,人们一直期望着光—电器件有较大的进展。一种制备半导体器件的组分梯度外廷技术已被用于制备诸如雪崩二极管这样的器件。但是,如果能在一块有梯度组分的基片之上制备单量子阱,甚至多量子阱,这将引出一种新型的表面光发射器。这种结构可以使近表面处聚集密度很高的载 With the development of the ultra-thin III-V epitaxial wafers and the development of microstructures in recent years, much progress has been expected in the photo-electric devices. A Component Gradient Technique for Preparing Semiconductor Devices Techniques have been used to fabricate devices such as avalanche diodes. However, if a single quantum well, or even a multiple quantum well, can be fabricated on a graded substrate, this will lead to a new type of surface light emitter. This structure allows the accumulation of high density near the surface of the load