一、引言我所研制的硅电荷耦合器件是采用N沟道多晶硅交迭栅结构。本文主要叙述我们开展化学气相淀积多晶硅和氮化硅工艺中的一些工作实践和认识。在大规模和超大规模集成电路的研制及生产中,化学气相淀积技术(简称CVD技术) I. INTRODUCTION The silicon charge-coupled device developed by me is made of N-channel polysilicon overlapped gate structure. This article describes some of our practices and knowledge in CVD and polysilicon. In the large-scale and VLSI research and production, chemical vapor deposition technology (referred to as CVD technology)