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采用脉冲激光沉积(PLD)法在Si(111)衬底上制备了Eu3+,Li+共掺杂的ZnO薄膜,分别在450,500,550和600℃条件下进行退火,退火气氛为真空。利用X射线衍射(XRD)仪和荧光分光光度计研究了退火温度对薄膜结构和光致发光(PL)的影响。研究结果表明,Eu3+,Li+共掺杂的ZnO薄膜具有c轴择优取向,Eu3+,Li+没有单独形成结晶的氧化物,均以离子形式掺入ZnO晶格中。PL谱中有较宽的ZnO基质缺陷发光,ZnO基质与稀土Eu3+之间存在能量传递,但没有有效的能量传递。随着退火温度的增加,薄膜发光先增强后减弱,退火温度为550℃时发光最强。当用395 nm的激发光激发样品时,仅观察到稀土Eu3+在594 nm附近的特征发光峰,但发光强度随退火温度变化不明显。
Eu3 + and Li + codoped ZnO films were prepared on Si (111) substrate by pulsed laser deposition (PLD) method and annealed at 450, 500, 550 and 600 ℃, respectively. The effects of annealing temperature on the structure and photoluminescence (PL) of the films were investigated by X-ray diffraction (XRD) and fluorescence spectrophotometer. The results show that the Eu3 + and Li + co-doped ZnO films have the c-axis preferred orientation, and Eu3 + and Li + do not form crystalline oxides, all of which are incorporated into the ZnO lattice as ions. In the PL spectrum, there is a wide range of ZnO matrix defects emitting light. There is energy transfer between the ZnO matrix and the rare earth Eu3 +, but no effective energy transfer occurs. With the increase of annealing temperature, the luminescence of the film first enhanced and then weakened, and the luminescence was the strongest when the annealing temperature was 550 ℃. When the sample was excited by 395 nm excitation light, only the characteristic emission peak of Eu3 + near 594 nm was observed, but the luminescence intensity did not change obviously with the annealing temperature.