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Techniques for fabricating solution-processed zinc oxide(ZnO)-based thin-film transistors(TFTs)are feasible with solution using various routes.Here,ZnO TFTs were fabricated via sol-gel method using zinc acetate as the starting reagent with different modifiers and solvents.The ZnO thin-film semiconductors with well-controlled,preferential crystal orientation and densely packed ZnO crystals can be prepared with the optimized fabrication conditions,exhibiting excellent field-effect far exceeding those of hydrogenated amorphous silicon(a-Si:H).However,the field-effect characteristics of ZnO TFTs were different for different precursor systems which were constituted by zinc acetate,modifiers and solvents.The co-modification of acetoin and monoethanolamine for the precursor system exhibited higher extent of crystal orientation and field-effect.The maximum mobility of 7.65 cm2V-1s-1 and current on-to-off ratio of~105–106 have been obtained.
Techniques for fabricating solution-processed zinc oxide (ZnO) -based thin-film transistors (TFTs) are feasible with solution using various routes. Here, ZnO TFTs were fabricated via sol-gel method using zinc acetate as the starting reagent with different modifiers and solvents. ZnO thin-film semiconductors with well-controlled, preferential crystal orientation and densely packed ZnO crystals can be prepared with the optimized fabrication conditions, exhibiting excellent field-effect far exceeding those of hydrogenated amorphous silicon (a-Si: H). However, the field-effect characteristics of ZnO precursor cells are different for different precursor systems which were composed by zinc acetate, modifiers and solvents. The co-modification of acetoin and monoethanolamine for the precursor system exhibits elevated orientation of crystal orientation and field-effect. The maximum mobility of 7.65 cm2V-1s-1 and current on-to-off ratio of ~ 105-106 have been obtained.