非晶态物质是当前物理学界研究的一个重要对象,而对其中的非晶态半导体的研究可以说是半导体研究领域中除了大规模集成电路外的又一个具有无限广阔发展余地的领域。直到80年代中,对非晶态半导体的研究还只集中在硫硒族玻璃上,自从1975年英国Spear小组用辉光放电法制出了低态隙密度的非晶态氢硅合金(a—Si∶H)后,引起了世界性的注意,对非晶态半导体的研究开始转向以a—si∶H为代表的IV族元素,并在太阳能电池摄像器件、 Amorphous materials are one of the most important research objects in the field of physics. However, the research on amorphous semiconductors in this field can be said to be another area with immense potential for development in the semiconductor research field besides large-scale integrated circuits. Until the 1980s, the research on amorphous semiconductors was still focused on the sulfur-selenium glass. Since 1975, the British Spear group made the low-gap density amorphous hydrogen-silicon alloy (a-Si : H), attracted worldwide attention, the research on amorphous semiconductors turned to Group IV elements represented by a-si: H, and in the solar cell imaging device,