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本文研究了基体偏压、氧分压强和淀积后退火对ITO膜电阻率的影响,通过比较理论结果和实验结果,弄清了这几个参数影响ITO膜电阻率的机理,并确定出最佳镀制参数。
In this paper, the influence of substrate bias, partial pressure of oxygen and annealing after deposition on the resistivity of ITO film was studied. The mechanism of these parameters affecting the resistivity of ITO film was clarified by comparing the theoretical results with the experimental results. Good plating parameters.