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电荷转移器件在红外探测器镶嵌列阵信号读出和处理中的应用,使我们能够预见一代新的传感器,其敏感元数将大大增加。在各种可能选择的方法中,确定研究在低“能隙”半导体材料蹄镉汞上制备的单片器件。碲镉汞特别适合于3～5微米和8～14微米波段的红外探测,这是众所周知的。达到这些目的的关键是在光谱窗口、半导体材料的类型、工作温度、寻址和读出方式、信号处理等限制条件中作最佳选择。本文第一部分叙述通过电荷转移进行读出的矩阵的基本结构模型。这种MIS元件探测红外辐射并积分产生的电荷。要实现这两种功能,必须改进红外系统的设计。根据研究这种模型的结果,可以预计这些器件的性能。第二部分叙述二维矩阵的寻址和读出方式。比较电荷注入器件和电荷耦合器件,根据工艺和材料性质,择优选取。参照上述结果,讨论实现这样一个矩阵所作的可能择选。最后介绍实现8×8元矩阵的方案。
The application of charge transfer devices to the readout and processing of IR detector inlaid array signals allows us to anticipate a new generation of sensors with a significant increase in the number of sensitive elements. Among the various possible alternatives, it was determined to investigate monolithic devices fabricated on mercury cadmium mercury in low-energy “gap” semiconductor materials. HgCdTe is particularly well-suited for infrared detection in the 3-5 micron and 8-14 micron bands, as is well known. The key to achieving these goals is to make the best choice in the spectral window, type of semiconductor material, operating temperature, addressing and readout, signal processing and other constraints. The first part of this article describes the basic structural model of a matrix read by charge transfer. This MIS element detects infrared radiation and integrates the resulting charge. To achieve these two functions, the design of the infrared system must be improved. Based on the results of studying this model, the performance of these devices can be predicted. The second part describes the two-dimensional matrix addressing and readout. Comparison of charge injection devices and charge-coupled devices, according to the nature of the process and materials, preferably selected. Referring to the above results, we discuss the possible alternatives to implement such a matrix. Finally introduce the program to achieve 8 × 8 yuan matrix.