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描述了一种多元合成研究任意中子源对半导体辐照损伤能谱等效的方法。以D-T 中子源和200~# 反应堆中子源为已知模拟源,对一个任意中子源进行了最小二乘法拟合。选择3DK2 器件做辐照实验,得到了几个中子源对硅半导体辐照损伤的初步的能谱等效结果。
A method of multivariate synthesis to study the equivalence of any neutron source to the energy spectrum of semiconductor radiation damage is described. Taking the D-T neutron source and the 200 ~ # reactor neutron source as the known simulation source, a least-squares method fitting is performed on an arbitrary neutron source. Select 3DK2 device to do the experiment of irradiation, get several neutron source on the silicon semiconductor radiation damage preliminary energy spectrum equivalent results.