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为了优化传统AlGaN/GaN high electron mobility transistors结构表面电场分布,提高器件击穿电压和可靠性,本文利用不影响AlGaN/GaN异质结极化效应的Si3N4钝化层电荷分布,提出了一种Si3N4钝化层部分固定正电荷AlGaN/GaN high electron mobility transistors新结构.Si3N4钝化层中部分固定正电荷通过电场调制效应使表面电场分布中产生新的电场峰而趋于均匀.新电场峰使得新结构栅边缘和漏端高电场有效降低,器件击穿电压从传统结构的296V提高到新结构的650V,而且可靠性改善.通过Si3N4与AlGaN界面横、纵向电场分布,说明了产生表面电场峰的电场调制效应,为设计Si3N4层部分固定正电荷新结构提供了科学依据.Si3N4钝化层部分固定正电荷的补偿作用,使沟道二维电子气浓度增加,导通电阻减小,输出电流提高.
In order to optimize the electric field distribution on the surface of traditional AlGaN / GaN high electron mobility transistors and improve the device breakdown voltage and reliability, we propose a Si3N4 passivation layer charge distribution that does not affect the polarization effect of AlGaN / GaN heterojunction. The passivation layer partially fixes a new structure of positive charge AlGaN / GaN high electron mobility transistors. The partially fixed positive charge in the Si3N4 passivation layer causes a new electric field peak to appear uniform in the surface electric field distribution. The high electric field at the edge and drain of the structure gate is effectively reduced, and the breakdown voltage of the device is increased from 296V in the conventional structure to 650V in the new structure, and the reliability is improved. The horizontal and vertical electric field distributions at the Si3N4 and AlGaN interfaces illustrate that the electric field peak The electric field modulation effect provides a scientific basis for the design of a new fixed positive charge structure of Si3N4 layer.The partial positive charge compensation of Si3N4 passivation layer increases the two-dimensional electron gas concentration in the channel, decreases the on-resistance and increases the output current .