本文采用MOSFET的亚阈外推测量技术,研究MOSFET在低温(77°K),~(60)Coγ射线辐照下,辐照感生氧化层电荷和界面态。在77°K辐照下,n沟道MOSFET辐照感生氧化层电荷比室温更加明显。77°K时,辐照感生界面态的增加是室温辐照下的20％左右。p沟MOSFET在77°K辐照下,处于截止偏置的退化大于导通偏置。导通偏置辐照时,未观察到界面态的产生。 In this paper, subthreshold extrapolated measurement technique of MOSFET is used to study the charge and interface states of the induced oxide layer under the irradiation of low temperature (77 ° K) and ~ (60) Co γ-rays. At 77 ° K, the charge of the n-channel MOSFET is higher than that of room temperature. At 77 ° K, the increase of irradiation-induced interface state is about 20% at room temperature. The p-channel MOSFET is at a deactivation bias greater than the on bias at 77 ° K. No conduction of interface states was observed during turn-on bias irradiation.