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由于GaN材料的高的饱和电子速度和击穿场强,GaN基HEMT已经成为实现毫米波器件的重要选择。回顾了GaN基HEMT器件材料结构的发展历程,就目前GaN基毫米波HEMT器件设计应用存在的短沟道效应和源漏间较大的导通电阻两个主要问题进行了机理分析,并对GaN基HEMT器件的毫米波应用未来发展方向进行了分析。同时从GaN基HEMT器件材料结构设计入手对解决方案进行了探讨性研究。针对面向毫米波应用的GaN基HEMT材料结构,为有效的抑制短沟道效应,可以采用栅凹槽结构加背势垒结构、采用InAlN等新材料,可以有效降低源漏导通电阻。
GaN-based HEMTs have become an important choice for implementing millimeter-wave devices due to the high saturation electron velocity and breakdown field strength of GaN materials. The development history of material structure of GaN-based HEMT devices is reviewed. Two shortcomings of short channel effect and large on-resistance between source and drain of GaN-based millimeter-wave HEMT devices are analyzed. The future development of millimeter wave based HEMT devices is analyzed. At the same time, the solution research was carried out from the material structure design of GaN-based HEMT devices. For the GaN-based HEMT material structure for millimeter-wave applications, in order to effectively suppress the short-channel effect, a gate-recess structure and a back-barrier structure can be used. New materials such as InAlN can effectively reduce the on-resistance of the source and the drain.