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已测定在Hg_(1-x)Cd_xTe中所选用的一些杂质的掺杂特性。主要着重的是IB和ⅢA族的元素,预计在金属亚晶格上取代。以及ⅤA和ⅦA族元素,预计在Te亚晶格上取代。此外,还测定了Ⅳ族一些元素的性能和Li的性能。通过扩散或在晶体生长时把杂质掺入Hg_(1-x)Cd_xTe中,Cu、Ag和Li是快扩散受主,Ga是快扩散施主,Al和Si是需要高扩散温度来实现扩散的施主,P和As是慢扩散受主,Br是慢扩散施主,Sn看来是不活泼的。一般地说,在金属亚晶格上取代的杂质是快速扩散杂质,而在Te亚晶格上取代的那些杂质是慢扩散杂质。
The doping characteristics of some of the impurities selected for Hg_ (1-x) Cd_xTe have been determined. The main emphasis is on the elements of IB and IIIA, which are expected to be replaced by metal sublattices. And Group VA and VIIA elements are expected to be substituted on the Te sublattice. In addition, the properties of some elements of Group IV and the properties of Li were also determined. By diffusing or incorporating impurities into Hg_ (1-x) Cd_xTe during crystal growth, Cu, Ag and Li are fast-diffusion acceptors, Ga are fast-diffusion donors, and Al and Si are those that require a high diffusion temperature for diffusion , P and As are slow diffusion acceptors, Br is slow diffusion donors, and Sn appears to be inactive. In general, the impurities that are substituted on the metal sub-lattice are rapidly diffusive impurities, whereas those that are substituted on Te sub-lattices are slowly diffusive impurities.