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小至20毫微米的砷化镓结构已用高分辨率电子束光刻和反应离子腐蚀法做出。用单层电子抗蚀剂剥离法在半导体表面形成NiCr图形。用SiCl_4等离子体腐蚀把这种金属掩膜图形变换到Ⅲ-Ⅴ族材料上。
Gallium arsenide structures as small as 20 nanometers have been made using high resolution electron beam lithography and reactive ion etching. NiCr patterns are formed on the surface of the semiconductor by a single-layer electronic resist stripping method. This metal mask pattern is converted to III-V materials by SiCl 4 plasma etching.