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简单介绍了硅片表面超薄(0.3～8nm)氧化硅厚度的XPS测量方法。方法根据XPS测得的元素硅和氧化硅的Si2p谱线强度,使用较简单的厚度分析公式计算。本文还介绍了厚度分析公式中两个关键参数(光电子衰减长度LSiO2和氧化硅纯硅体材料的Si2p电子强度比R0)的理论计算和实验测量方法。此外,文中还介绍了用XPS测量厚度的实验步骤,包括样品方位角和光电子发射角的选择以及XPS数据处理方法。使用上述XPS测量方法,目前对于超薄SiO2的厚度测量不确定度已可达到1%。
The XPS measurement method of ultra-thin (0.3 ~ 8nm) silicon oxide on the surface of silicon wafer is introduced briefly. Methods The Si2p line intensities of elemental silicon and silicon oxide measured by XPS were calculated using a simpler thickness analysis formula. This paper also introduces the theoretical calculation and experimental measurement methods of two key parameters (the photoelectron decay length LSiO2 and the Si2p electron intensity ratio R0 of silicon oxide pure silicon material) in the thickness analysis formula. In addition, the paper also introduces the experimental steps of measuring the thickness by XPS, including the choice of sample azimuth and photoelectron emission angle and XPS data processing method. With the above XPS measurement method, the uncertainty of the thickness measurement of ultra-thin SiO2 is up to 1% at present.