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用扫描电镜观察Si:H薄膜的剖面,发现用平板电极沉积的Si:H薄膜呈柱状结构,而用环形电极沉积的膜具有层状结构。喇曼谱和X射线谱表明,这两种结构对应于微晶相的存在。测定薄膜的暗电导与温度间的关系,发现薄膜的电导激话能为各向异性。联系耦合方式讨论了薄膜的生长机制。
The cross-section of the Si: H thin film was observed with a scanning electron microscope. It was found that the Si: H thin film deposited with the plate electrode has a columnar structure whereas the film deposited with the ring electrode has a layered structure. The Raman and X-ray spectra show that these two structures correspond to the presence of the microcrystalline phase. The relationship between the dark conductance and the temperature of the film was measured and it was found that the conductivity of the film can be anisotropic. Contact coupling method to discuss the growth mechanism of the film.