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采用三极管型等离子体增强化学汽相淀积（TriodePECVD）系统，适当选取硅烷（SiH4）和氢气（H2）流量比制备纳米硅（nc-Si：H）薄膜．保持栅极偏压为－100V，改变SiH4、H2流量比可以得到薄膜从非晶硅（a－Si：H）到nc－Si：H的结构转变，其氢气流量比例[H2]／（[H2]＋[SiH4]）的阈值为93．3％．随着流量比进一步增大，晶化比例从12％增大至50％，但晶粒尺寸基本保持不变，nc－Si晶粒的平均尺寸约2．5nm，这是不同于常规二极管PECVD、氢稀释制备的nc－Si：H薄膜的新结果，并从实验上验证了电导率和电子迁移率的渗流现象．
A triode PECVD system was used to prepare the nc-Si: H thin film with the appropriate ratio of silane (SiH4) to hydrogen (H2). The gate bias was maintained at -100V. The SiH4 / H2 flow ratio was used to obtain the structure transition from amorphous silicon (a-Si: H) to nc-Si: H. ] + [SiH4]) is 93.3%. With the increase of flow ratio, the crystallization ratio increased from 12% to 50%, but the grain size remained unchanged, the average size of nc-Si grains was about 2.5nm, which is different from the conventional diode PECVD, Hydrogen dilution of the nc-Si: H film of the new results, and experimentally verified the conductivity and electron mobility of the seepage phenomenon.