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高性能、成本有效的SOI 技术在抗辐射电子学的短期应用和亚微米VLSI 的长期应用方面是重要的.本文概述了在这些应用方面,SOI 技术超过本体硅技术的各种优点.还讨论了SOI 的CMOS、CJFET 和双极器件结构.评述了束流再结晶和高剂量氧注入等最有希望的SOI 技术的现状和前景.并强调了材料质量和制造可靠性一类的问题.
High-performance, cost-effective SOI technology is important in short-term applications of anti-radiation electronics and in the long-term use of sub-micron VLSIs.This paper outlines the advantages of SOI over bulk silicon technology in these applications. SOI’s CMOS, CJFET, and bipolar device architectures, reviewed the current status and prospects of the most promising SOI technologies such as beam recrystallization and high-dose oxygen injection, and highlighted issues such as material quality and manufacturing reliability.