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本文研究了生长条件对GaP:N外延层的形貌、生长速率、位错密度、S坑密度、氮浓度、少子寿命的影响。实验表明,外延层中的氮浓度、少子寿命随外延生长起始温度的升高而增大。用GaN作为掺杂氮源,在1037—980℃温度范围生长的外延层中氮浓度不高于5.6×10~(17)cm~(-3);LEC GaP衬底(τ_m～5ns)上在995—900℃温度范围生长的外延层,其少子寿命可达～130ns。外延层中的位错密度和衬底中大体相同,但S坑密度降低一个数量级。
In this paper, the effects of growth conditions on the morphology, growth rate, dislocation density, S-pit density, nitrogen concentration and minority-lifetime of GaP: N epitaxial layers were investigated. Experiments show that the nitrogen concentration in the epitaxial layer and the lifetime of the minority carriers increase with the increase of the initial temperature of the epitaxial growth. The nitrogen concentration in the epitaxial layer grown at the temperature range of 1037-980 ℃ is not higher than 5.6 × 10 ~ (17) cm ~ (-3) with GaN as the source of doping nitrogen. On the LEC GaP substrate (τ_m ~ 5ns) The epitaxial layer grown in the temperature range of 995-900 ℃ has a lifetime of less than ~ 130ns. The dislocation density in the epitaxial layer is about the same as in the substrate, but the S-pit density is reduced by an order of magnitude.